Semiconductor device and method of manufacturing the same

ABSTRACT

Wirings including first conductive layer patterns and insulating mask layer patterns are formed on a substrate. Insulating spacers are formed on sidewalls of the wirings. Self-aligned contact pads including portions of a second conductive layer are formed to contact with surfaces of the insulating spacers and to fill up a gap between the wirings. An interlayer dielectric layer is formed on the substrate where the contact pads are formed and is then partially etched to form contact holes exposing the contact pads. A selective epitaxial silicon layer is formed on the contact pads exposed through the contact holes to cover the insulating mask layer patterns. Thus, a short-circuit between the lower wiring and an upper wiring formed in the contact holes is prevented.

CROSS REFERENCE TO RELATED APPLICATION

This is a Divisional of U.S. patent application Ser. No. 10/688,017,filed on Oct. 16, 2003, now U.S. Pat. No. 7,052,983, which claimspriority from Korean Patent Application No. 2003-4358, filed on Jan. 22,2003, the contents of which are incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This disclosure relates to a semiconductor device, and moreparticularly, to a dynamic random access memory (DRAM) and a method ofmanufacturing the same.

2. Description of the Related Art

As techniques for manufacturing semiconductor devices develop and theapplications for memory devices expand, memory devices having largecapacities are required. In particular, the integration density of aDRAM device, wherein a memory cell is composed of one capacitor and onetransistor, has remarkably improved.

As the integration density of semiconductor device increases, the sizeof contact hole connecting one element to another element or one layerto another layer decreases, but the thickness of an interlayerdielectric layer increases. Thus, the aspect ratio of the contact hole,i.e., the ratio between its height to its diameter, increases and analignment margin of the contact hole decreases in a photolithographyprocess. As a result, the formation of small contact holes byconventional methods becomes very difficult.

In DRAM devices, a technique for forming landing pads is widely used toreduce the aspect ratio of a contact hole, and a self-aligned contact(SAC) structure is applied to a pattern having a feature size of about0.1 m or less to settle short-circuit problems caused by the decrease ofan alignment margin of the contact hole.

FIGS. 1A and 1B are cross-sectional diagrams illustrating a conventionalmethod of manufacturing a DRAM device having SAC pads.

Referring to FIG. 1A, a semiconductor substrate 10 is divided intoactive regions and isolation regions by an isolation process such as atrench isolation process. A thin gate oxide layer (not shown) is grownon the surfaces of the active regions by a thermal oxidation process.Gate electrodes 18 of metal oxide semiconductor (MOS) transistorsserving as word lines are formed on the gate oxide layer. Preferably,each of the gate electrodes 18 is formed to have a polycide structureincluding a polysilicon layer 14 doped with an impurity at a highconcentration and a tungsten silicide layer 16 formed on the polysiliconlayer 14.

The gate electrode 18 includes a gate mask layer 20 formed on thetungsten layer 16 and a gate spacer 22 formed on a sidewall of the gateelectrode 18. The gate mask layer 20 and the gate spacer 22 are formedusing silicon nitride.

Source/drain regions (not shown) of the MOS transistors are formed inthe surface portions of the substrate 10 exposed between the gatespacers 22. The source/drain regions are formed via an ion implantationprocess using the gate electrodes 18 and the gate spacers 22 as masks.

A first interlayer dielectric layer 24 is formed on the surface of thesubstrate 10 including the MOS transistors formed thereon. The firstinterlayer dielectric layer 24 is etched using bar-type mask patternsincluding openings that expose the active regions when the surfaces ofthe source/drain regions between the gate electrodes 18 are exposed.

A first conductive layer is formed on the first interlayer dielectriclayer 24 using doped polysilicon to fill up the openings. The firstconductive layer is planarized via a chemical mechanical polishing (CMP)process when the surfaces of the gate mask layers 20 are exposed. As aresult, first and second contact pads 26 a and 26 b are formed in theopenings. The first and second contact pads 26 a and 26 b make contactwith the source/drain regions. In addition, the first and second contactpads 26 a and 26 b are self-aligned relative to the gate electrodes 18.

A second interlayer dielectric layer 28 composed of silicon oxide isformed on the first interlayer dielectric layer 24 and on the contactpads 26 a and 26 b. The second interlayer dielectric layer 28 is thenplanarized via a CMP process or an etch-back process. The secondinterlayer dielectric layer 28 is partially etched by a photolithographyprocess so that bit line contact holes 30 exposing the second contactpads 26 b are formed over the drain regions.

A second conductive layer and a silicon nitride layer are sequentiallyformed on the second interlayer dielectric layer 28 to fill up the bitline contact holes 30. The silicon nitride layer and the secondconductive layer are patterned via a photolithography process so thatbit lines 32 including bit line masks are formed on the secondinterlayer dielectric layer 28.

A third interlayer dielectric layer 36 is formed on the entire surfaceof a resultant structure using silicon oxide. The third interlayerdielectric layer 36 is then planarized via a CMP process or an etch-backprocess. The third interlayer dielectric layer 36 and the secondinterlayer dielectric layer 28 are partially etched by aphotolithography process such that storage node contact holes 38exposing the first contact pads 26 a are formed over the source regions.Here, the storage node contact holes 38 are formed to have a line shapeso that the first contact pads 26 a adjacent to one another in adirection identical to the gate direction are simultaneously exposed.

Referring to FIG. 1B, a silicon nitride layer is formed in the storagenode contact holes 38 and on the third interlayer dielectric layer 36.The silicon nitride layer is then anisotropically etched to form contactspacers 40 on the inner sidewalls of the storage node contact holes 38.

A third conductive layer composed of doped polysilicon is formed to fillthe storage node contact holes 38 on the third interlayer dielectriclayer 36. The third conductive layer is then planarized via a CMPprocess when the surface of the third interlayer dielectric layer 36 isexposed. Accordingly, storage node contact plugs (not shown) separatedinto node units are formed in the storage node contact holes 38,respectively.

According to the conventional method, the recesses of the siliconnitride gate mask layers 20 are formed during the etching process forforming the SAC pads 26 a and 26 b, and also during the CMP process forseparating the contact pads 26 a and 26 b into node units. Furthermore,the recesses of the gate mask layers 20 are generated during the etchingprocess for forming the contact spacers 40. Hence, the gate mask layers20 do not sufficiently protect the underlying gate electrodes 18. Whenthe thickness of the gate mask layer 20 is increased to resolve thisproblem, gate notching may occur due to a low etching selectivitybetween the photoresist film and the silicon nitride layer.

Since the initial width of the gate mask layer 20 is limited, the widthof the gate mask layer 20 decreases continuously as the etching processfor forming the SAC pads and subsequent processes are carried out,thereby exposing edge portions of the gate electrodes 18. As a result,the bit lines 32 may be electrically short-circuited with the gateelectrodes 18 (refer to portion “C” in FIG. 1A) or the storage nodecontact plugs may be electrically short-circuited with the gateelectrodes 18 (refer to portion “D” in FIG. 1B).

SUMMARY OF THE INVENTION

It is a first feature of the present invention to provide asemiconductor device which can prevent an electrical short-circuitbetween a lower wiring and an upper wiring.

It is a second feature of the present invention to provide a method ofmanufacturing a semiconductor device for preventing an electricalshort-circuit between a lower wiring and an upper wiring.

It is a third feature of the present invention to provide a method ofmanufacturing a DRAM device which can prevent an electricalshort-circuit between a storage node contact and a gate electrode orbetween a bit line contact and the gate electrode.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the invention will becomemore apparent to those of ordinary skill in the art by describing indetail preferred embodiments thereof with reference to the attacheddrawings.

FIGS. 1A and 1B are cross-sectional diagrams illustrating a method ofmanufacturing a DRAM device according to the conventional method.

FIGS. 2A to 2E are cross-sectional diagrams illustrating a method ofmanufacturing a semiconductor device according to an embodiment of theinvention.

FIGS. 3A to 11B are plan diagrams and cross-sectional diagramsillustrating a method of manufacturing a semiconductor device accordingto another embodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

The invention now will be described more fully hereinafter withreference to the accompanying drawings, in which preferred embodimentsof the invention are shown. This invention may, however, be embodied inmany different forms and should not be construed as limited to theembodiments set forth herein; rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of the invention to those skilled in the art. Likenumbers refer to like elements throughout. The relative thickness oflayers in the illustrations may be exaggerated for purposes ofdescribing the invention.

FIGS. 2A to 2E are cross-sectional diagrams illustrating a method ofmanufacturing a semiconductor device according to an embodiment of theinvention.

Referring to FIG. 2A, a plurality of wirings 55 is formed on asemiconductor substrate 50. The wirings 55 are separated from oneanother. Each of the wirings 55 includes a first conductive layerpattern 52 and an insulating mask layer pattern 54 that includes asilicon nitride based material. The first conductive layer pattern 52includes a doped polysilicon or a metal. Alternatively, the firstconductive layer pattern 52 may be formed to have a composite layerincluding a first film of doped polysilicon and a second film of metalsilicide.

An insulating layer is formed on the substrate 50 including the wirings55. The insulating layer is formed using a silicon nitride basedmaterial. The insulating layer is then anisotropically etched to formspacers 56 on the sidewalls of the wirings 55, respectively.

A first interlayer dielectric layer 58 is formed on the spacers 56, thewirings 55 and the substrate 50 using a silicon oxide based material.The first interlayer dielectric layer 58 is anisotropically etched usingmask patterns, e.g., photoresist patterns having openings 60 exposingcontact regions. In this case, the first interlayer dielectric layer 58is etched using an etching gas that has a high etching selectivityrelative to silicon nitride, thereby exposing the surface of thesubstrate 50 between the adjacent wirings 55. Preferably, the firstinterlayer dielectric layer 58 is etched using bar-shaped mask patternswhen the surface of the substrate between the wiring 55 and the adjacentwiring is exposed. Here, the mask patterns include the openings 60 thatopen at least two contact regions different from each other.

Referring to FIG. 2B, a second conductive layer 61 is formed on thefirst interlayer dielectric layer to fill up the openings 60.Preferably, the second conductive layer 61 is formed using polysilicondoped with an impurity at a high concentration.

Referring to FIG. 2C, the second conductive layer 61 and the firstinterlayer dielectric layer 58 are planarized by a CMP process, anetch-back process, or a mixed process of a CMP and an etch-back when thesurfaces of the insulating mask layer patterns 54 of the wirings 55 areexposed, thereby forming SAC pads 62 making contact with the surfaces ofthe spacers 56. The gaps between the wirings 55 are filled with the SACpads 62. Preferably, at least two different SAC pads 62 are formed sothat the SAC pads 62 make contact with at least two different contactregions, respectively.

Referring to FIG. 2D, a second interlayer dielectric layer 64 is formedon the contact pads 62, the wirings 55 and the first interlayerdielectric layer 58 using a silicon oxide based material. The secondinterlayer dielectric layer 64 is then partially etched by aphotolithography process such that contact hole 66 exposing one of thecontact pads 62 is formed. Here, the contact hole 66 may be formed tohave a circular shape corresponding to that of the contact pad 62 orformed to have a line shape exposing one contact pad 62 and adjacentcontact pads 62 in a direction parallel to that of the wirings 55.

Referring to FIG. 2E, a selective epitaxial silicon layer 68 is grown onthe surface of the contact pad 62 exposed by the contact hole 66 suchthat the selective epitaxial silicon layer 68 is thick enough to coverthe insulating mask layer patterns 54 of the wirings 55.

Though it is not shown in the figures, a material having an etchingselectivity relative to the second interlayer dielectric layer 64, e.g.,silicon nitride, is continuously deposited on the second interlayerdielectric layer 64 and in the contact hole 66 to form a silicon nitridelayer. The silicon nitride layer is then anisotropically etched usingthe selective epitaxial silicon layer 68 as an etching stopper to formcontact spacers including portions of the silicon nitride layer on theinner sidewall of the contact hole 66. Here, the selective epitaxialsilicon layer 68 protects the insulating mask layer patterns 54 thatenclose the underlying wirings 55 during a subsequent etching process.

A third conductive layer, e.g., a doped polysilicon layer, is formed onthe second interlayer dielectric layer 64 to fill up the contact hole66. The third conductive layer is planarized by a CMP process, anetch-back process or a mixed process of a CMP and an etch-back when thesurface of the second interlayer dielectric layer 64 is exposed, therebyforming a contact plug electrically connecting the exposed contact pad62 to an upper wiring that is successively formed in the contact hole66. Alternatively, after a third conductive layer composed of dopedpolysilicon or metal is formed on the second interlayer dielectric layer64 to fill up the contact hole 66, the third conductive layer ispatterned by a photolithography process so that an upper wiring iselectrically connected to the exposed contact pad 62 through the contacthole 66.

According to this embodiment, after forming the contact hole 66 exposingthe SAC pad 62, the selective epitaxial silicon layer 68 is formed onthe exposed contact pad 62 to cover the insulating mask layer patterns54 enclosing the underlying wirings 55. Thus, due to the selectiveepitaxial silicon layer 68, the recess of the insulating mask layerpattern 54 is not formed during a subsequent etching process for formingthe contact spacers. As a result, the lower wirings 55 are notelectrically short-circuited with the contact plug or the upper wiringin the contact hole 66.

FIGS. 3A to 11B are plan diagrams and cross-sectional diagramsillustrating a method of manufacturing a semiconductor device inaccordance with another embodiment of the invention.

FIG. 3A is a plan diagram of a substrate 100 on which active regions 101are defined and FIGS. 3B and 3C are cross-sectional diagrams taken alonglines A-A′ and B-B′ in FIG. 3A. Referring to FIGS. 3A, 3B, and 3C, thesemiconductor substrate 100 is divided into the active regions 101 andisolation regions 102 by a shallow trench isolation (STI) process.Preferably, as shown in FIG. 3A, the active regions 101 are roughlypill-shaped, with thickened middle portions. Alternatively, the activeregions 101 are substantially rectangular shaped or substantiallyT-shaped.

At least two separate contact regions will be formed in each activeregions in a successive process.

FIG. 4A is a plan diagram of the substrate 100 on which gate lines 108are formed and FIGS. 4B and 4C are cross-sectional diagrams taken alonglines A-A′ and B-B′ in FIG. 4A.

Referring to FIGS. 4A to 4C, after growing a thin gate oxide layer (notshown) on the surface of the active regions 101 by a thermal oxidationprocess, a first conductive layer for gate electrodes and a gate masklayer are sequentially formed on the gate oxide layer. Preferably, thefirst conductive layer includes a doped polysilicon layer and a metalsilicide layer stacked on the polysilicon layer. The gate mask layer iscomposed of a material having an etching selectivity relative to aninterlayer dielectric layer successively formed in a subsequent process.Preferably, the gate mask layer is formed using a silicon nitride basedmaterial.

The gate mask layer and the first conductive layer are patterned via aphotolithography process to form the gate lines 108 on the semiconductorsubstrate 100. Each of the gate lines 108 includes a doped polysiliconlayer pattern 104, a metal silicide layer pattern 106, and a gate masklayer pattern 110. Particularly, after forming first photoresistpatterns (not shown) on the gate mask layer, the gate mask layer is dryetched using the first photoresist patterns as etching masks to form thegate mask layer patterns 110. The first photoresist patterns are removedvia an ashing process and a stripping process. The first conductivelayer is dry etched using the gate mask layer patterns 110 as masks toform a plurality of gate lines 108 including the doped polysilicon layerpatterns 104 and the metal silicide layer patterns 106. The gate lines108 pass through in the active regions 101 serve as gate electrodes ofMOS transistors, respectively.

An insulating layer is formed on the surface of the substrate 100 havingthe gate lines 108 formed thereon. The insulating layer is formed usinga material having an etching selectivity relative to the interlayerdielectric layer subsequently formed. Preferably, the insulating layerincludes a silicon nitride based material. The insulating layer is thenanisotropically etched to form gate spacers 112 on the sidewalls of thegate lines 108. As a result, one gate line 108 is electrically isolatedfrom an adjacent gate line 108 because the top faces and the sidewallsof the gate lines 108 are surrounded with the insulating layer patterns,i.e., the gate mask layer patterns 110 and the gate spacers 112.

Source/drain regions (not shown) are formed in the active regions 101exposed between the gate spacers 112 by an ion implantation process.Here, before forming the gate spacers 112, a lightly doped drain (LDD)ion implantation process may be carried out to form lightly dopedsource/drain regions in the active region 101 exposed between the gatelines 108, thereby accomplishing the source/drains having LDDstructures.

Some of the source/drain regions correspond to storage node contactregions connected to storage electrodes of capacitors while othersource/drain regions correspond to bit line contact regions connected tobit lines that are subsequently formed. In the present embodiment, thesource regions become storage node contact regions and the drain regionsbecome bit line contact regions. Two storage node contact regions andone bit line contact region are formed in one active region 101 becausethe storage node contact regions and the bit line contact region areformed between adjacent gate lines 108 passing through active region101.

FIG. 5A is a plan diagram of the substrate where SAC mask patterns areformed and FIGS. 5B and 5C are cross-sectional diagrams taken alonglines A-A′ and B-B′ in FIG. 5A.

Referring to FIGS. 5A to 5C, a first interlayer dielectric layer 114including a silicon oxide based material is formed on the substrate 100including the MOS transistors formed thereon. After forming the firstinterlayer dielectric layer 114, the surface of the first interlayerdielectric layer 114 may be planarized to ensure the process margin of asubsequent photo process by a CMP process, an etch-back process, or amixed process of a CMP and an etch-back.

The first interlayer dielectric layer 114 is anisotropically etchedusing SAC mask patterns, e.g., second photoresist patterns having barshapes that include openings 115 exposing the active regions 101 whenthe surfaces of the storage node contact regions and the bit linecontact regions are exposed between the gate lines 108.

FIG. 6A is a plan diagram of the substrate 100 on which first and secondcontact pads 116 a and 116 b are formed, and FIGS. 6B and 6C arecross-sectional diagrams taken along lines A-A′ and B-B′ in FIG. 6A.

Referring to FIGS. 6A to 6C, a second conductive layer, e.g., apolysilicon layer doped with an impurity at a high concentration, isformed on the first interlayer dielectric layer 114 to fill up theopenings 115. The second conductive layer and the first interlayerdielectric layer 114 are then planarized when the surfaces of the gatemask layer patterns 110 are exposed, thereby forming at least twodifferent contact pads separated into node units in the openings 115,e.g., the first contact pads 116 a and the second contact pads 116 b.The first contact pads 116 a make contact with the storage node contactregions while the second contact pads 116 b make contact with the bitline contact regions.

Preferably, the planarization of the second conductive layer isperformed via a CMP process, an etch-back process or a mixed process ofa CMP and an etch-back.

FIG. 7A is a plan diagram of the substrate 100 where bit line contactholes 122 are formed and FIGS. 7B and 7C are cross-sectional diagramstaken along lines A-A′ and B-B′ in FIG. 7A.

Referring to FIGS. 7A to 7C, after forming the first and second contactpads 116 a and 116 b, a silicon oxide based material such asborophosphorous silicate glass (BPSG), undoped silicate glass (USG),high density plasma (HDP) oxide, chemical vapor deposition (CVD) oxide,etc., is deposited to form a second interlayer dielectric layer 118. Thesecond interlayer dielectric layer 118 electrically isolates the contactpads 116 a and 116 b from the bit lines successively formed thereon.

After forming the second interlayer dielectric layer 118, the surface ofthe second interlayer dielectric layer 118 may be planarized by a CMP oran etch-back process to ensure the process margin of a subsequent photoprocess.

The second interlayer dielectric layer 118 is partially etched by aphotolithography process, thereby forming the bit line contact holes 122exposing the second contact pads 116 b on the bit line contact regions.A first selective epitaxial silicon layer 122 is formed on the secondcontact pads 116 b exposed through the bit line contact holes 120. Thefirst selective epitaxial silicon layer 122 is thick enough to cover thegate mask layer patterns 110. For example, the first selective epitaxialsilicon layer 122 has a thickness of approximately 500 Å. The firstselective epitaxial silicon layer 122 protects the underlying gate masklayer patterns 110 during a subsequent etching process.

FIG. 8A is a plan diagram of the substrate 100 on which the bit lines124 are formed and FIGS. 8B and 8C are cross-sectional diagrams takenalong lines A-A′ and B-B′ in FIG. 8A.

Referring to FIGS. 8A to 8C, after forming the first selective epitaxialsilicon layer 122 on the exposed surfaces of the first contact pads 116b, a third conductive layer for the bit lines 124 and bit line masklayer patterns 126 are sequentially formed on the second interlayerdielectric layer 118 to fill up the bit line contact holes 120,respectively. Preferably, the third conductive layer may be formed tohave a composite layer including a first film composed of a first metaland/or a compound of the first metal, e.g., titanium (Ti)/titaniumnitride (TiN), and a second film composed of a second metal, e.g.,tungsten (W). The bit line mask layer patterns 126 protect theunderlying bit line 124 during a subsequent etching process for formingcontacts. Each of the bit line mask layer patterns 126 is formed using asilicon nitride based material.

In accordance with the above-described steps, the third conductive layerincluding the dual films makes direct contact with the bit line contactholes 120. Alternatively, bit line contact plugs may be additionallyformed in the bit line contact holes 120 and the third conductive layermay make direct contact with the bit line contact plugs.

Particularly, a barrier metal layer including Ti/TiN and a third metallayer including W are formed in the bit line contact holes 120 and onthe second interlayer dielectric layer 118. The third metal layer isthen removed via a CMP process or an etch-back process when the surfaceof the second interlayer dielectric layer 118 is exposed. As a result,the bit line contact plugs including the barrier metal layer and thethird metal layer are formed in the bit line contact holes 120,respectively.

After forming the bit line contact plugs, the third conductive layercomposed of a fourth metal, e.g., W, and the bit line mask layer aresequentially formed on the bit line contact plugs and on the secondinterlayer dielectric layer 118. The third conductive layer correspondsto a bit line conductive layer. When the bit line contact plugs areformed in the bit line contact holes 120, the bit line conductive layeris formed to have a single film.

After third photoresist patterns are formed on the bit line mask layer,the bit line mask layer is dry etched using the third photoresistpatterns as etching masks so that bit line mask patterns 126 are formed.After removing the third photoresist patterns by an ashing process and astripping process, the third conductive layer is dry etched using thebit line mask layer patterns 126 as etching masks, thereby forming aplurality of the bit lines 120 electrically connected to the firstcontact pads 116 b through the bit line contact holes 120. Each of thebit lines 124 extends in a direction perpendicular to the gate line 108.

Alternatively, before forming the third photoresist patterns, ananti-reflective layer may be formed on the bit line mask layer so as toimprove the photolithography process. The anti-reflective layer may beformed to have a single film of silicon oxynitride (SiON) or a number offilms including high temperature oxide (HTO) films and SiON films. Theanti-reflective layer prevents the lights from being reflected from thelower substrate 100 during the photolithography process, whichfacilitates the formation of the photoresist patterns.

After forming the bit lines 124, a silicon nitride layer is formed onthe surface of a resultant structure and is then anisotropically etchedto form bit line spacers 128 on the sidewalls of the bit lines 124,Preferably, the bit line spacer 128 has a thickness of about 100˜200 Å.

FIG. 9A is a plan diagram of the substrate 100 where storage nodecontact holes 132 are formed and FIGS. 9B and 9C are cross-sectionaldiagrams taken along lines A-A′ and B-B′ in FIG. 9A.

Referring to FIGS. 9A to 9C, after forming the bit lines 124 surroundedby the bit line mask layer patterns 126 and the bit line spacers 128, asilicon oxide based material such as BPSG, USG, HDP oxide, CVD oxide,etc., is deposited on the surface of a resultant structure, therebyforming a third interlayer dielectric layer 130. The third interlayerdielectric layer 130 electrically isolates the bit lines 124 fromstorage node contact plugs that successively formed in a subsequentprocess.

After forming the third interlayer dielectric layer 130, the surface ofthe third interlayer dielectric layer 130 is planarized by a CMP processor an etch-back process so as to ensure the process margin of asubsequent photo process. The third interlayer dielectric layer 130 andthe second interlayer dielectric layer 118 are partially etched via aphotolithography process, thereby forming the storage node contact holes132 exposing the first contact pads 116 a on the storage node contactregions. Here, the reference numeral 118 a indicates the remainingsecond interlayer dielectric layer after the etching process.

In particular, with a photo process, there are formed fourth photoresistpatterns (not shown) having line shapes that extend in a directionsubstantially parallel to the gate lines 108. The third interlayerdielectric layer 130 and the second interlayer dielectric layer 118 areanisotropically etched using the fourth photoresist patterns as etchingmasks. Here, the third and second interlayer dielectric layers 130 and118 are etched using an etching gas having a high etching selectivityrelative to the silicon nitride layer patterns, i.e., the bit line masklayer patterns 126 and the bit line spacers 128. As a result, there areformed the storage node contact holes 132 having the line shapesexposing the first contact pads 116 a located between adjacent bit lines124. That is, all the storage node contact holes 132 are formed to havethe line shape such that the first contact pads 116 a and an adjacentfirst contact pads 116 a are simultaneously exposed in the directionparallel to the gate lines 108.

FIGS. 10A and 10B are cross-sectional diagrams taken along lines A-A′and B-B′ in FIG. 9A and illustrate steps of forming second selectiveepitaxial silicon layers 134 and contact spacers 136.

Referring to FIGS. 10A and 10B, after forming the storage node contactholes 132 having the line shapes, the fourth photoresist patterns areremoved by an ashing process and a stripping process.

Second selective epitaxial layers 134 are formed on the exposed firstcontact pads 116 a. Each of the second selective epitaxial layers 134has a thickness of approximately 500 Å that is enough to cover the gatemask layer patterns 110.

An insulating layer is formed on a resultant structure using a materialhaving an etching selectivity relative to the third interlayerdielectric layer, e.g., a silicon nitride based material. The insulatinglayer is anisotropically etched using the second selective epitaxialsilicon layers 134 as etching stoppers to form the contact spacers 136on the inner sidewalls of the storage node contact holes 132,respectively. Here, the contact spacers 136 are formed on the sidewallsof the remaining second interlayer dielectric layer 118 a and the bitline spacers 128. The contact spacers 136 prevent the bit lines 124 frombeing electrically short-circuited with storage node contact plugs thatare successively formed in the storage node contact holes 132. Duringthe etching process for forming the contact spacers 136, the secondselective epitaxial silicon layers 134 formed on the first contact pad116 a protect the gate mask layer patterns 110 enclosing the gate lines108.

FIGS. 11A and 11B are cross-sectional diagrams taken along lines A-A′and B-B′ in FIG. 9A and illustrate steps of forming the storage nodecontact plugs 138.

Referring to FIGS. 11A and 11B, after forming the contact spacers 136, afourth conductive layer, e.g., a doped polysilicon layer, is formed onthe third interlayer dielectric layer 130 to fill the storage nodecontact holes 132. The fourth conductive layer is then planarized by aCMP or an etch-back process when the upper surface of the thirdinterlayer dielectric layer 130 is exposed, thereby forming the storagenode contact plugs 138 separated into node units in the storage nodecontact holes 132, respectively.

Thereafter, capacitors (not shown) are formed that have storageelectrodes, dielectric layers, and plate electrodes, using a capacitorforming process.

According to this embodiment, during the etching process for forming thecontact spacers 136 that prevent the electrical short-circuit betweenthe bit lines 124 and the storage node contact plugs 138, the selectiveepitaxial silicon layers 134 formed on the contact pads 116 a and 116 bprevent the gate mask layer patterns 110 that enclose the gate lines 108from being etched. Hence, the electrical short-circuit between the gateline 108 and the bit line 124 or between the gate line 108 and thestorage node contact plug 138 can be prevented.

According to embodiments of the invention, after forming the contactholes exposing the SAC pads, the selective epitaxial silicon layers aregrown on the contact pads exposed through the contact holes to cover theinsulating mask layer patterns that enclose the underlying wirings.Thus, the selective epitaxial silicon layers protect the insulating masklayer patterns during successive etching processes, thereby preventingthe lower wirings from being electrically short-circuited with the upperwirings that are formed in the contact holes.

Embodiments of the invention will now be described in a non-limitingway.

In accordance with one aspect of the invention, there is provided asemiconductor device including a semiconductor substrate and wiringsformed on the substrate and separated from each other. Each of thewirings includes a first conductive layer pattern and an insulating masklayer pattern formed on the first conductive layer pattern. Insulatingspacers are formed on sidewalls of the wirings. SAC pads includingportions of a second conductive layer are formed to fill a gap betweenthe wirings. An interlayer dielectric layer having contact holes thatexpose the contact pads are formed on the contact pads, the wirings andthe substrate. A selective epitaxial silicon layer is formed on thecontact pads exposed through the contact holes to cover the insulatingmask layer pattern.

Preferably, the insulating mask layer pattern and the insulating layerspacers include silicon nitride based materials.

In accordance with another aspect of the invention, wirings includingfirst conductive layer patterns and insulating mask layer patterns areformed on a substrate. The wirings are separated from each other.Insulating spacers are formed on sidewalls of the wirings. SAC padsincluding portions of a second conductive layer are formed to fill a gapbetween the wirings. An interlayer dielectric layer is formed on thesubstrate wherein the contact pads are formed. The interlayer dielectriclayer is partially etched to form contact holes exposing the contactpads. A selective epitaxial silicon layer is formed on the contact padsexposed through the contact holes to cover the insulating mask layerpatterns.

In accordance with still another aspect of the invention, wirings areformed on a semiconductor substrate and separated from each other. Eachof the wirings includes a first conductive layer pattern and aninsulating mask layer pattern formed on the first conductive layerpattern. Insulating spacers are formed on sidewalls of the wirings.Using mask patterns of bar type having openings including at least twodifferent contact regions, there are formed at least two different SACpads making contact with portions of a surface of the substrate betweenthe wirings. An interlayer dielectric layer is formed on the substratewhere at least two different SAC pads are formed. The interlayerdielectric layer is partially etched to form a contact hole exposing oneof the at least two SAC pads. A selective epitaxial silicon layer isformed on one of the at least SAC pads to cover the insulating masklayer pattern.

Preferably, a first interlayer dielectric layer is formed on theinsulating layer spacers, the wirings and the substrate. The firstinterlayer dielectric layer is etched using the insulating mask patternuntil the portions of the substrate between the wirings are exposed.After forming a second conductive layer on the first interlayerdielectric layer and the portions of the substrate between the wirings,the second conductive layer and the first interlayer dielectric layerare planarized until a surface of the insulating mask layer pattern isexposed.

Preferably, the contact hole is formed to have the line shapes so thatone of the at least two SAC pads and another SAC pad arranged in adirection substantially parallel to the wirings are simultaneouslyexposed through the contact hole.

In accordance with yet another aspect of the invention, gate linesincluding gate mask layer patterns and gate spacers formed on sidewallsthereof are formed on a semiconductor substrate so that storage nodecontact regions and bit line contact regions are formed on portions ofthe substrate between the gate lines. First contact pads and secondcontact pads are formed using SAC mask patterns having bar shapes thatinclude openings exposing the active regions. The first contact padsmake contact with the storage node contact regions while the secondcontact pads make contact with the bit line contact regions. Aninterlayer dielectric layer is formed on the substrate where the firstand second contact pads are formed. The interlayer dielectric layer ispartially etched to form storage node contact holes having line shapesso that one first contact pad and an adjacent first contact pad arrangedin a direction substantially parallel to the gate lines are exposed byeach of the storage node contact holes. A selective epitaxial siliconlayer is formed on the first contact pads exposed by the storage nodecontact holes to cover the gate mask layer patterns. Storage nodecontact plugs are formed in the storage node contact holes so that thestorage node contact plugs are electrically connected to the firstcontact pads.

According to a different aspect of the invention, after forming thecontact holes exposing the SAC pads, the selective epitaxial siliconlayer is grown on the contact pads exposed through the contact holes tocover the insulating mask layer patterns enclosing the underlyingwirings. Hence, the selective epitaxial silicon layer protects theinsulating mask layer patterns during a subsequent etching process,thereby preventing lower wirings from being electrically short-circuitedwith upper wirings successively formed in the contact hole.

Preferred embodiments of the invention have been disclosed herein and,although specific terms are employed, they are used and are to beinterpreted in a generic and descriptive sense only and not for purposeof limitation. Accordingly, it will be understood by those of ordinaryskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the invention as definedin the following claims.

1. A semiconductor device comprising: a semiconductor substrate; wiringsformed on the substrate and separated from each other, each of thewirings including a first conductive layer pattern and an insulatingmask layer pattern formed on the first conductive layer pattern;insulating spacers formed on sidewalls of the wirings; a self-alignedcontact pad including a second conductive layer, the self-alignedcontact pad being in contact with surfaces of the insulating spacers tofill a gap between the wirings; an interlayer dielectric layer formed onthe contact pad, the wirings, and the substrate, the interlayerdielectric layer including a contact hole defined therein, wherein asidewall of the contact hole extends from an upper surface of theinsulating mask layer pattern to a height above the upper surface of theinsulating mask layer pattern; and a selective epitaxial silicon layerformed within the contact hole, on the contact pad and covering theinsulating mask layer pattern, wherein the sidewall of the contact holeis laterally adjacent to a lowermost portion of the selective epitaxialsilicon layer covering the insulating mask layer pattern, and wherein anuppermost surface of the selective epitaxial silicon layer is lower thanan uppermost surface of the interlayer dielectric.
 2. The semiconductordevice of claim 1, wherein the insulating mask layer pattern and theinsulating spacers comprise materials having an etching selectivityrelative to the interlayer dielectric layer.
 3. The semiconductor deviceof claim 2, wherein the insulating mask layer pattern and the insulatingspacers comprise silicon nitride based materials.
 4. The semiconductordevice of claim 1, wherein the second conductive layer comprises dopedpolysilicon.
 5. The semiconductor device of claim 1, further comprising:a contact plug formed in the contact hole; and contact spacers formed onthe selective epitaxial silicon layer between inner sidewalls of thecontact hole and the contact plug.
 6. The semiconductor device of claim5, wherein the contact spacer comprises a material having an etchingselectivity relative to the interlayer dielectric layer.
 7. Thesemiconductor device of claim 6, wherein the contact spacers comprisesilicon nitride based materials.
 8. A semiconductor device comprising: asemiconductor substrate; wirings formed on the substrate and separatedfrom each other, each of the wirings including a first conductive layerpattern and an insulating mask layer pattern formed on the firstconductive layer pattern; insulating spacers formed on sidewalls of thewirings; self-aligned contact pads including portions of a secondconductive layer, each of the self-aligned contact pads in contact withsurfaces of the insulating spacers to fill a gap between the wirings; aninterlayer dielectric layer formed on the contact pads, the wirings, andthe substrate, the interlayer dielectric layer including contact holesthat expose the contact pads, wherein the insulating mask layer patternand the insulating spacers comprise materials having an etchingselectivity relative to the interlayer dielectric layer; and a selectiveepitaxial silicon layer formed on the contact pads exposed through thecontact holes to cover the insulating mask layer pattern.
 9. Thesemiconductor device of claim 8, wherein the insulating mask layerpattern and the insulating spacers comprise silicon nitride basedmaterials.
 10. The semiconductor device of claim 8, wherein the secondconductive layer comprises doped polysilicon.
 11. The semiconductordevice of claim 8, further comprising: contact plugs formed in thecontact holes; and contact spacers formed on the selective epitaxialsilicon layer between inner sidewalls of the contact holes and thecontact plugs.
 12. The semiconductor device of claim 11, wherein each ofthe contact spacers comprises a material having an etching selectivityrelative to the interlayer dielectric layer.
 13. The semiconductordevice of claim 12, wherein the contact spacers comprise silicon nitridebased materials.
 14. A semiconductor device comprising: a semiconductorsubstrate; wirings formed on the substrate and separated from eachother, each of the wirings including a first conductive layer patternand an insulating mask layer pattern formed on the first conductivelayer pattern; insulating spacers formed on sidewalls of the wirings;self-aligned contact pads including portions of a second conductivelayer, each of the self-aligned contact pads in contact with surfaces ofthe insulating spacers to fill a gap between the wirings, wherein thesecond conductive layer comprises polysilicon; an interlayer dielectriclayer formed on the contact pads, the wirings, and the substrate, theinterlayer dielectric layer including contact holes that expose thecontact pads; and a selective epitaxial silicon layer formed on thecontact pads exposed through the contact holes to cover the insulatingmask layer pattern.
 15. The semiconductor device of claim 14, whereinthe insulating mask layer pattern and the insulating spacers comprisematerials having an etching selectivity relative to the interlayerdielectric layer.
 16. The semiconductor device of claim 15, wherein theinsulating mask layer pattern and the insulating spacers comprisesilicon nitride based materials.
 17. The semiconductor device of claim14, wherein the second conductive layer comprises doped polysilicon. 18.The semiconductor device of claim 14, further comprising: contact plugsformed in the contact holes; and contact spacers formed on the selectiveepitaxial silicon layer between inner sidewalls of the contact holes andthe contact plugs.
 19. The semiconductor device of claim 18, whereineach of the contact spacers comprises a material having an etchingselectivity relative to the interlayer dielectric layer.
 20. Thesemiconductor device of claim 19, wherein the contact spacers comprisesilicon nitride based materials.
 21. The semiconductor device of claim1, wherein the selective epitaxial silicon layer occupies less than anentirety of the contact hole.